3D V-NAND Technology
Samsung Electronics rewrote the book on digital data storage with the introduction of its next chapter: 3D Vertical NAND (V-NAND) technology.
As outlined in the video above, this revolutionary new paradigm in memory semiconductors doubles processing speeds and halves power consumption in solid-state drives (SSDs) — currently used in a wide range of applications, from client PCs to enterprise servers.
Prior to 3D V-NAND technology’s introduction, SSD memory had traditionally been increased by cramming more cells into a limited 2D plane. Because placing the cells too closely together can ultimately compromise reliability, this new approach instead stacks them three-dimensionally.
To illustrate, imagine a building, where instead of cramming more rooms into the fixed space of a single floor, you increase capacity by building new levels. This construction alleviates issues associated with shrinking NAND lithography and makes it possible for enterprises to adopt SSDs with faster response rates and larger capacities.
With the layered innovation, Samsung has added new depth to memory semiconductor technology.
This will not only accelerate developments in cloud computing, real-time analysis and big data networks, but also advance the era of IoT, wherein immense amounts of data will need to be processed and transferred faster than ever before.